2008. 4. 21 1/3 semiconductor technical data ktd1510 triple diffused npn transistor revision no : 2 high power amplifier darlington transistor. features h complementary to ktb2510. h recommended for 60w audio amplifier output stage. maximum rating (ta=25 ? ) electrical characteristics (ta=25 ? ) characteristic symbol test condition min. typ. max. unit collector cut-off current i cbo v cb =160v, i e =0 - - 100 a emitter cut-off current i ebo v eb =5v, i c =0 - - 100 a collector-emitter breakdown voltage v (br)ceo i c =30ma, i b =0 150 - - v dc current gain h fe v ce =4v, i c =7a 5000 12000 20000 collector-emitter saturation voltage v ce(sat) i c =7a, i b =7ma - - 2.5 v base-emitter saturation voltage v be(sat) i c =7a, i b =7ma - - 3.0 v transition frequency f t v ce =12v, i c =2a - 50 - mhz collector output capacitance c ob v cb =10v, f=1mhz, i e =0 - 230 - pf characteristic symbol rating unit collector-base voltage v cbo 160 v collector-emitter voltage v ceo 150 v emitter-base voltage v ebo 5 v collector current i c 10 a base current i b 1 a collector powerdissipation (tc=25 ? ) p c 100 w junction temperature t j 150 ? storage temperature range t stg -55 q 150 ?
2008. 4. 21 2/3 ktd1510 revision no : 2
2008. 4. 21 3/3 ktd1510 revision no : 2
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